منابع مشابه
Depth profiling of peptide films with TOF-SIMS and a C60 probe.
A buckminsterfullerene ion source is employed to characterize peptide-doped trehalose thin films. The experiments are designed to utilize the unique sputtering properties of cluster ion beams for molecular depth profiling. The results show that trehalose films with high uniformity can be prepared on Si by a spin-coating technique. Bombardment of the film with C60+ results in high quality time-o...
متن کاملToF-SIMS Depth Profiling of a Complex Polymeric Coating Employing a C60 Sputter Source
A complex poly(vinylidene difluoride) (PVdF)/poly(methyl methacrylate) (PMMA) based coil coating formulation has been investigated using time-of-flight SIMS (ToFSIMS). Employing a Bi3 + analysis source and a Buckminsterfullerene (C60) sputter source, depth profiles were obtained through the polymeric materials in the outer few nanometres of the PVdF topcoat. These investigations demonstrate tha...
متن کاملSputter Depth Profiling by SIMS; Calibration of SIMS Depth Scale Using Multi-layer Reference Materials
In-depth distribution of doping elements in shallow depth region is an important role of secondary ion mass spectrometry (SIMS) for the development of next-generation semiconductor devices. KRISS has developed two types of multi-layer reference materials by ion beam sputter deposition. A multiple delta-layer reference material where the layers of one element are very thin can be used to evaluat...
متن کاملTOF-SIMS in Cosmochemistry
Time-of-flight secondary ion mass spectrometry (TOF-SIMS) was introduced into cosmochemistry about a decade ago. Major advantages of TOF-SIMS compared to other ion microprobe techniques are (a) parallel detection of all secondary ions with one polarity in a single measurement – both polarities in subsequent analyses, (b) high lateral resolution, (c) sufficient mass resolution for separation of ...
متن کاملAccurate depth profiling of oxidized SiGe (intrinsic or doped) thin films by extended Full Spectrum ToF-SIMS
Precise depth profiling of the various elements present in Si/SiGe heterostructures is crucial in order to optimize the electrical properties of devices. The condensation technique allows the Ge enrichment of low Ge content SiGe layers by a selective oxidation of Si compared to Ge [1]. It can be used to obtain Ge nanowires for the elaboration of high performance devices [2]. Saracco et al. prop...
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ژورنال
عنوان ژورنال: npj Materials Degradation
سال: 2019
ISSN: 2397-2106
DOI: 10.1038/s41529-019-0076-3